A method of providing an out-of-plane semiconductor structure and a structure fabricated thereby is disclosed. The method comprises acts of: providing a substrate defining a major surface; providing a template layer having a predetermined template thickness on the major surface of the substrate; forming a recess in the template layer having a recess pattern and a recess depth smaller than the template thickness; and epitaxially growing a semiconductor structure from the recess. A planar shape of the recess pattern formed in the template layer substantially dictates an extending direction of the semiconductor structure.