Invention Grant
- Patent Title: Annealing method for thin film electrodes
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Application No.: US14040597Application Date: 2013-09-27
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Publication No.: US09601751B2Publication Date: 2017-03-21
- Inventor: Lili Huang , Richard M. Mank
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Farber Schreck, LLP
- Main IPC: B05D3/00
- IPC: B05D3/00 ; H01M4/131 ; H01M4/139 ; H01M4/1391 ; H01M4/04 ; H01M4/02

Abstract:
A method of annealing a thin film deposited on a substrate. According to the method, the thin film deposited on the substrate is provided. The provided thin film is irradiated with electromagnetic radiation until a predetermined crystal quality of the thin film is achieved. The spectral band of the electromagnetic radiation is selected such that the thin film is substantially absorptive to the electromagnetic radiation and the substrate is substantially transparent to the electromagnetic radiation.
Public/Granted literature
- US20140272190A1 Annealing Method for Thin Film Electrodes Public/Granted day:2014-09-18
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