Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14244820Application Date: 2014-04-03
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Publication No.: US09606012B2Publication Date: 2017-03-28
- Inventor: Yutaka Akiyama , Yasutaka Nakashiba
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-087796 20130418
- Main IPC: H01L29/84
- IPC: H01L29/84 ; G01L9/00 ; H01L41/113

Abstract:
An object of the present invention is to suppress an error in the value detected by a pressure sensor, which may be caused when environmental temperature varies. A semiconductor substrate has a first conductivity type. A semiconductor layer is formed over a first surface of the semiconductor substrate. Each of resistance parts has a second conductivity type, and is formed in the semiconductor layer. The resistance parts are spaced apart from each other. A separation region is a region of the first conductivity type formed in the semiconductor layer, and electrically separates the resistance parts from each other. A depressed portion is formed in a second surface of the semiconductor substrate, and overlaps the resistance parts, when viewed planarly. The semiconductor layer is an epitaxial layer.
Public/Granted literature
- US20140312440A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-10-23
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