Invention Grant
- Patent Title: Tsv wafer with improved fracture strength
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Application No.: US14825778Application Date: 2015-08-13
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Publication No.: US09607929B2Publication Date: 2017-03-28
- Inventor: James W. Adkisson , Yoba Amoah , Jeffrey P. Gambino , Christine A. Leggett , Max L. Lifson , Charles F. Musante , Sruthi Samala , David C. Thomas
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Riley, LLC
- Agent Steven J. Meyers
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L23/532

Abstract:
A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
Public/Granted literature
- US20150348876A1 TSV WAFER WITH IMPROVED FRACTURE STRENGTH Public/Granted day:2015-12-03
Information query
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