Invention Grant
- Patent Title: Conductive via structure and fabrication method thereof
-
Application No.: US14669527Application Date: 2015-03-26
-
Publication No.: US09607941B2Publication Date: 2017-03-28
- Inventor: Yan-Heng Chen , Chun-Tang Lin , Chieh-Yuan Chi , Mu-Hsuan Chan
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW103113640A 20140415
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/31 ; H01L23/532 ; H01L23/522 ; H01L23/498 ; H01L23/538

Abstract:
A method for fabricating a conductive via structure is provided, which includes the steps of: forming in an encapsulant a plurality of openings penetrating therethrough; forming a dielectric layer on the encapsulant and in the openings of the encapsulant; forming a plurality of vias in the dielectric layer in the openings of the encapsulant; and forming a conductive material in the vias to thereby form conductive vias. Therefore, by filling the openings having rough wall surfaces with the dielectric layer so as to form the vias having even wall surfaces, the present invention improves the quality of the conductive vias.
Public/Granted literature
- US20150294938A1 CONDUCTIVE VIA STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2015-10-15
Information query
IPC分类: