Invention Grant
- Patent Title: Capacitor-transistor strap connections for a memory cell
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Application No.: US15007937Application Date: 2016-01-27
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Publication No.: US09607993B1Publication Date: 2017-03-28
- Inventor: Byeong Y. Kim , William L. Nicoll
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L27/108
Abstract:
Capacitor strap connections for a memory cell and device structures for making such capacitor strap connections. A deep trench capacitor is formed in a substrate. A collar comprised of an electrical insulator is formed at least partially inside an upper section of a deep trench in which the deep trench capacitor is formed. A portion of the collar is removed to define a notch extending through the collar, and a connection strap is formed in the notch. A fin is formed from a portion of the substrate, and is coupled by the connection strap with an electrode of the deep trench capacitor that is located inside the deep trench.
Public/Granted literature
- US2190749A Antiseptic preparation Public/Granted day:1940-02-20
Information query
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