Invention Grant
- Patent Title: Infrared image sensor
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Application No.: US14831820Application Date: 2015-08-20
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Publication No.: US09609239B2Publication Date: 2017-03-28
- Inventor: Chun-Hao Chuang , Chien-Hsien Tseng , Kazuaki Hashimoto , Keng-Yu Chou , Wei-Chieh Chiang , Yuichiro Yamashita
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H04N5/33
- IPC: H04N5/33 ; H04N5/225

Abstract:
An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device.
Public/Granted literature
- US20170054924A1 INFRARED IMAGE SENSOR Public/Granted day:2017-02-23
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