Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
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Application No.: US14525467Application Date: 2014-10-28
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Publication No.: US09613811B2Publication Date: 2017-04-04
- Inventor: Jae-Jik Baek , Sang-Jine Park , Bo-Un Yoon , Young-Sang Youn , Ji-Min Jeong , Ji-Hoon Cha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0151453 20131206
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/266 ; H01L21/8234 ; H01L21/8238 ; H01L29/66
Abstract:
A first protective layer, a mask layer, a second protective layer and a photoresist layer are sequentially formed on a substrate. A photoresist pattern is formed by partially removing the photoresist layer. An ion implantation mask is formed by sequentially etching the second protective layer, the mask layer and the first protective layer using the photoresist pattern. The ion implantation mask exposes the substrate. Impurities are implanted in an upper portion of the substrate exposed by the ion implantation mask.
Public/Granted literature
- US20150162197A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2015-06-11
Information query
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