- 专利标题: Electrostatic discharge protection structure and method
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申请号: US14527836申请日: 2014-10-30
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公开(公告)号: US09613857B2公开(公告)日: 2017-04-04
- 发明人: Jie Chen , Hsien-Wei Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/02
- IPC分类号: H01L23/02 ; H01L21/768 ; H01L21/56 ; H01L25/00 ; H01L23/31 ; H01L23/522 ; H01L23/528 ; H01L23/552 ; H01L23/00 ; H01L25/10 ; H01L21/683
摘要:
A semiconductor package comprises a top package and a bottom package with a plurality of fan-out interconnect structures. A plurality of inter-package connectors are formed inside a gap between the top package and the bottom package. A conductive protection layer is formed over the semiconductor package, wherein the conductive protection layer seals the gap around its perimeter, wherein the conductive protection layer covers an upper surface and a side wall of the top package, and wherein the conductive protection layer covers portions of an upper surface of the bottom package that extend beyond a boundary of the top package and a top portion of a side wall of the bottom package.
公开/授权文献
- US20160126220A1 Electrostatic Discharge Protection Structure and Method 公开/授权日:2016-05-05
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