Invention Grant
- Patent Title: Gate stack formed with interrupted deposition processes and laser annealing
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Application No.: US14755829Application Date: 2015-06-30
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Publication No.: US09613870B2Publication Date: 2017-04-04
- Inventor: Takashi Ando , Aritra Dasgupta , Oleg Gluschenkov , Balaji Kannan , Unoh Kwon
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Steven Meyers; Andrew M. Calderon
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/8234 ; H01L29/423 ; H01L27/088 ; H01L21/28 ; H01L21/263
Abstract:
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.
Public/Granted literature
- US20170005006A1 GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER ANNEALING Public/Granted day:2017-01-05
Information query
IPC分类:
