Invention Grant
- Patent Title: Thin film transistor substrate including a channel length measuring pattern and display panel having the same
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Application No.: US14976492Application Date: 2015-12-21
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Publication No.: US09613876B2Publication Date: 2017-04-04
- Inventor: Yong Tae Cho , Joong Tae Kim , In Woo Kim , Kwang Su Park , Da Young Lee , Min Ha Hwang , Seong Jun Hwang
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2015-0047684 20150403
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L27/12
Abstract:
A thin film transistor (TFT) substrate includes a base substrate, a TFT disposed on the base substrate. The TFT includes a gate electrode, a semiconductor layer comprising a channel region, and a source electrode and a drain electrode spaced apart from one another by a length of the channel region. The TFT substrate further includes a gate insulating layer disposed between the gate electrode and the semiconductor layer and a measuring pattern configured to measure a length of the channel region.
Public/Granted literature
- US20160293504A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME Public/Granted day:2016-10-06
Information query
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