Invention Grant
- Patent Title: Semiconductor device, semiconductor device layout, and method of manufacturing semiconductor device
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Application No.: US14666444Application Date: 2015-03-24
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Publication No.: US09613953B2Publication Date: 2017-04-04
- Inventor: Jhon Jhy Liaw
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/02 ; H01L29/06 ; H01L29/66 ; H01L21/8234
Abstract:
A layout of a semiconductor device is stored on a non-transitory computer-readable medium. The layout includes an active area region extending in a first direction, a gate electrode extending in a second direction and crossing the active area region, and a dummy gate extending in the second direction. The dummy gate is adjacent the gate electrode. The dummy gate is a dielectric dummy gate.
Public/Granted literature
- US20160284695A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE LAYOUT, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-09-29
Information query
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