- 专利标题： Semiconductor laser element and near-field light output device using same
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申请号： US15037552申请日： 2014-08-27
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公开(公告)号： US09614350B2公开(公告)日： 2017-04-04
- 发明人: Kentaroh Tani , Toshiyuki Kawakami , Akira Ariyoshi
- 申请人： Sharp Kabushiki Kaisha
- 申请人地址： JP Osaka-shi
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2013-240971 20131121
- 国际申请： PCT/JP2014/072414 WO 20140827
- 国际公布： WO2015/075988 WO 20150528
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/028 ; H01S5/042 ; H01S5/022 ; H01S5/22 ; H01S5/02 ; H01S5/16
摘要：
A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon.
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