Invention Grant
- Patent Title: Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
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Application No.: US15080241Application Date: 2016-03-24
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Publication No.: US09620411B2Publication Date: 2017-04-11
- Inventor: Krishnakumar Mani
- Applicant: III HOLDINGS 1, LLC
- Applicant Address: US DE Wilmington
- Assignee: III HOLDINGS 1, LLC
- Current Assignee: III HOLDINGS 1, LLC
- Current Assignee Address: US DE Wilmington
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L43/02 ; H01L27/22 ; G11C11/16 ; H01L21/285 ; H01L23/522 ; H01L23/528 ; H01L43/08 ; H01L43/10 ; H01L43/12
Abstract:
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.
Public/Granted literature
- US20160240431A1 MAGNETIC SIDEWALLS FOR WRITE LINES IN FIELD-INDUCED MRAM AND METHODS OF MANUFACTURING THEM Public/Granted day:2016-08-18
Information query
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