Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15298075Application Date: 2016-10-19
-
Publication No.: US09620442B2Publication Date: 2017-04-11
- Inventor: Eiji Shimada , Gentaro Ookura , Hiroyuki Inagi
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2014-186703 20140912
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31 ; H01L23/495

Abstract:
A semiconductor device includes a package part having a semiconductor element sealed in resin, a plurality of first leads each having an outer portion extending from a first side of the package part, and a plurality of second leads each having an outer portion extending from a second side of the package part. A combined bottom surface area of the outer portions of the plurality of first leads is greater than a combined bottom surface area of the outer portions of the plurality of second leads. The semiconductor device also includes a heat dissipation plate provided on the bottom surface of the package part and connected to at least one of the plurality of second leads.
Public/Granted literature
- US20170040245A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-09
Information query
IPC分类: