- 专利标题： Fin field effect transistor (FinFET) device structure with ultra-thin body and method for forming the same
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申请号： US14871361申请日： 2015-09-30
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公开(公告)号： US09620645B1公开(公告)日： 2017-04-11
- 发明人: Cheng-Chieh Lai , Kuang-Hsin Chen , Yung-Chun Wu , Mu-Shih Yeh
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/78 ; H01L29/423 ; H01L29/06 ; H01L29/161 ; H01L29/04 ; H01L29/66 ; H01L21/3065
摘要：
A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an oxide layer formed over a substrate and a fin structure formed over the oxide layer. The fin structure is made of a semiconductor layer, and the semiconductor layer includes a first portion, a second portion and a third portion. The second portion is between the first portion and the third portion. The first portion, the second portion and the third portion construct a U-shaped trench, and the second portion is below the U-shaped trench. The FinFET device structure further includes a gate structure formed in the U-shaped trench.
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