Invention Grant
- Patent Title: Thin film transistor, manufacturing method thereof and array substrate
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Application No.: US14388634Application Date: 2013-12-04
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Publication No.: US09620651B2Publication Date: 2017-04-11
- Inventor: Wenyu Zhang , Zongmin Tian , Jing Li
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201310175197 20130513
- International Application: PCT/CN2013/088543 WO 20131204
- International Announcement: WO2014/183422 WO 20141120
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/417

Abstract:
A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.
Public/Granted literature
- US20160225914A1 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE Public/Granted day:2016-08-04
Information query
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