- 专利标题: Thin film transistor, manufacturing method thereof and array substrate
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申请号: US14388634申请日: 2013-12-04
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公开(公告)号: US09620651B2公开(公告)日: 2017-04-11
- 发明人: Wenyu Zhang , Zongmin Tian , Jing Li
- 申请人: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址: CN Beijing CN Beijing
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Beijing CN Beijing
- 代理机构: Ladas & Parry LLP
- 优先权: CN201310175197 20130513
- 国际申请: PCT/CN2013/088543 WO 20131204
- 国际公布: WO2014/183422 WO 20141120
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L29/786 ; H01L29/417
摘要:
A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode provided on a base substrate, and along a direction perpendicular to the base substrate, the source electrode and the drain electrode are respectively provided at opposite both sides of the active layer, and the source electrode and the drain electrode contacts the active layer.
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