Invention Grant
- Patent Title: Method for etching piezoelectric film and method for manufacturing piezoelectric element
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Application No.: US14871339Application Date: 2015-09-30
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Publication No.: US09620704B2Publication Date: 2017-04-11
- Inventor: Takamichi Fujii , Akihiro Mukaiyama
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-076021 20130401
- Main IPC: C03C15/00
- IPC: C03C15/00 ; H01L41/332 ; H01L41/29 ; H01L41/047 ; H01L41/187
Abstract:
In a method for etching a piezoelectric film and a manufacturing method thereof, a piezoelectric film is formed on a substrate on which a lower electrode is formed, a metal film having a thickness of 20 nm to 300 nm is formed, a patterned resist film is formed, the metal film is etched with a first etchant to which the piezoelectric film has etching resistance, and the piezoelectric film is etched with a second etchant to which the metal film has etching resistance.
Public/Granted literature
- US20160027996A1 METHOD FOR ETCHING PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT Public/Granted day:2016-01-28
Information query
