An electronic device includes a semiconductor unit. The semiconductor unit includes a first electrode and a second electrode spaced apart from each other in a first direction; and a first material layer interposed between the first electrode and the second electrode and having a variable resistance characteristic or a threshold switching characteristic, wherein the first electrode, or the second electrode, or both includes a plurality of sub-electrodes and a plurality of second material layers that are alternately arranged in the first direction, and wherein each of the second material layers has a thickness that is sufficiently small to enable the second material layers to exhibit an ohmic-like behavior for a current flowing therein at an operating current of the semiconductor unit.