Invention Grant
- Patent Title: Generation of voltages
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Application No.: US14813883Application Date: 2015-07-30
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Publication No.: US09621032B2Publication Date: 2017-04-11
- Inventor: Feng Pan
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H03L5/00

Abstract:
Voltage generation circuits are useful in the generation of internal voltages for use in integrated circuits. Voltage generation circuits may include a stage capacitance and a voltage isolation device connected to the stage capacitance. The voltage isolation device may include a first current path between an input and an output of the voltage isolation device through a diode, and a second current path between the input and the output of the voltage isolation device through a gate. The gate is responsive to the contribution of a low-pass filter between the output of the voltage isolation device and the gate, and to the contribution of a high-pass filter between a clock signal node and the gate.
Public/Granted literature
- US20170033683A1 GENERATION OF VOLTAGES Public/Granted day:2017-02-02
Information query
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