Invention Grant
- Patent Title: Charge pump circuit for providing multiplied voltage
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Application No.: US14849194Application Date: 2015-09-09
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Publication No.: US09621033B2Publication Date: 2017-04-11
- Inventor: Jon S. Choy , Michael G. Neaves
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/38
- IPC: H01L21/38 ; H03K3/01 ; H02M3/07 ; H02M1/00
Abstract:
A charge pump comprises one or more pump stages for providing a negative boosted output voltage. Each of the one or more pump stages comprises a P-channel transistor formed in an isolated P-well and an N-channel transistor coupled in series with the P-channel transistor. Forming the P-channel transistor in the isolated P-well essentially eliminates a raised threshold voltage due to body effect.
Public/Granted literature
- US20170070137A1 CHARGE PUMP CIRCUIT FOR PROVIDING MULTIPLIED VOLTAGE Public/Granted day:2017-03-09
Information query
IPC分类:
