The semiconductor device includes a transistor including an oxide semiconductor film, a first gate electrode overlapping with the oxide semiconductor film, a gate insulating film between the oxide semiconductor film and the first gate electrode, a first insulating film over the oxide semiconductor film, a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film, a second insulating film over the first insulating film and the pair of electrodes, and a second gate electrode that is over the second insulating film and overlaps with the oxide semiconductor film. The first insulating film includes a region having a thickness of 1 nm or more and 50 nm or less, and the pair of electrodes includes a region in which a distance between the electrodes is 1 μm or more and 6 μm or less.