Invention Grant
- Patent Title: Methods of forming wafer level underfill materials and structures formed thereby
-
Application No.: US13795021Application Date: 2013-03-12
-
Publication No.: US09631065B2Publication Date: 2017-04-25
- Inventor: Anna M. Prakash , James C. Matayabas , Arjun Krishnan , Nisha Ananthakrishnan
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/29 ; C08K5/00 ; H01L21/78 ; B23K26/18 ; B23K26/364

Abstract:
Methods of forming microelectronic packaging structures and associated structures formed thereby are described. Those methods and structures may include forming a wafer level underfill (WLUF) material comprising a resin material, and adding at least one of a UV absorber, a sterically hindered amine light stabilizer (HALS), an organic surface protectant (OSP), and a fluxing agent to form the WLUF material. The WLUF is then applied to a top surface of a wafer comprising a plurality of die.
Public/Granted literature
- US20140264827A1 METHODS OF FORMING WAFER LEVEL UNDERFILL MATERIALS AND STRUCTURES FORMED THEREBY Public/Granted day:2014-09-18
Information query
IPC分类: