- 专利标题： Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive current
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申请号： US14184033申请日： 2014-02-19
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公开(公告)号： US09634132B2公开(公告)日： 2017-04-25
- 发明人: Tsung-Hsing Yu , Chia-Wen Liu , Yeh Hsu , Jean-Pierre Colinge
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理商 Jones Day
- 主分类号： H01L29/775
- IPC分类号： H01L29/775 ; H01L29/66 ; H01L29/06 ; H01L29/165
摘要：
A semiconductor device is provided having a channel formed from a nanowire with multi-level band gap energy. The semiconductor device comprises a nanowire structure formed between source and drain regions. The nanowire structure has a first band gap energy section joined with a second band gap energy section. The first band gap energy section is coupled to the source region and has a band gap energy level greater than the band gap energy level of the second band gap energy section. The second band gap energy section is coupled to the drain region. The first band gap energy section comprises a first material and the second band gap energy section comprises a second material wherein the first material is different from the second material. The semiconductor device further comprises a gate region around the junction between the first band gap energy section and the second band gap energy section.
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