- 专利标题： Method of manufacturing plasmon generator
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申请号： US13856109申请日： 2013-04-03
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公开(公告)号： US09640202B2公开(公告)日： 2017-05-02
- 发明人: Shigeki Tanemura , Yoshitaka Sasaki , Hiroyuki Ito , Yukinori Ikegawa , Hironori Araki , Seiichiro Tomita
- 申请人： Shigeki Tanemura , Yoshitaka Sasaki , Hiroyuki Ito , Yukinori Ikegawa , Hironori Araki , Seiichiro Tomita
- 申请人地址： US CA Milpitas
- 专利权人： HEADWAY TECHNOLOGIES, INC.
- 当前专利权人： HEADWAY TECHNOLOGIES, INC.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Oliff PLC
- 主分类号： G11B5/00
- IPC分类号： G11B5/00 ; G11B5/31 ; G11B5/60 ; G11B5/84
摘要：
A method of manufacturing a plasmon generator includes the steps of: forming an initial film made of a metal polycrystal and including a pre-plasmon-generator portion that later becomes the plasmon generator; heating the initial film with heating light so that a plurality of crystal grains constituting the metal polycrystal grow at least in the pre-plasmon-generator portion; stopping the heating of the initial film; and forming the plasmon generator by processing the initial film after the step of stopping the heating. The step of forming the plasmon generator includes the step of providing the pre-plasmon-generator portion with a front end face that generates near-field light.
公开/授权文献
- US20140298644A1 METHOD OF MANUFACTURING PLASMON GENERATOR 公开/授权日：2014-10-09
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