- 专利标题： Semiconductor structure and fabrication method thereof
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申请号： US14947673申请日： 2015-11-20
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公开(公告)号： US09640446B2公开(公告)日： 2017-05-02
- 发明人: Huayong Hu , Lihua Ding , Weiming He
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN Shanghai
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人地址： CN Shanghai
- 代理机构： Anova Law Group, PLLC
- 优先权： CN201410736249 20141204
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/66 ; H01L21/027 ; H01L21/311 ; H01L21/033 ; G03F9/00 ; H01L23/544
摘要：
A method for fabricating a semiconductor structure is provided. The method includes providing a semiconductor substrate; and forming a plurality of semiconductor devices on the semiconductor substrate. The method also includes forming a dielectric layer covering the plurality of the semiconductor devices on the semiconductor substrate; and forming an optical auxiliary layer configured to reflect a portion of a levelness-detecting light and absorb a portion of the levelness detecting light transmitting through the optical auxiliary layer during a levelness-detecting process over the dielectric layer. Further, the method includes forming a photoresist layer over the optical auxiliary layer; and detecting a levelness of the semiconductor substrate and exposing the photoresist layer to form a patterned photoresist layer.
公开/授权文献
- US20160163605A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 公开/授权日：2016-06-09
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