- 专利标题： Method for fabricating semiconductor device
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申请号： US15350113申请日： 2016-11-14
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公开(公告)号： US09640662B2公开(公告)日： 2017-05-02
- 发明人: Hao-Ming Lee
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 优先权： TW104102601A 20150126
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/12 ; H01L29/78 ; H01L21/84
摘要：
A method for fabricating semiconductor device includes the steps of: providing a substrate having at least one fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion; removing part of the bottom portion of the fin-shaped structure; forming an epitaxial layer on the substrate to surround the bottom portion of the fin-shaped structure; transforming the bottom portion of the fin-shaped structure into the epitaxial layer; and removing part of the epitaxial layer.
公开/授权文献
- US20170062430A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2017-03-02
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