Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US14941721Application Date: 2015-11-16
-
Publication No.: US09641102B2Publication Date: 2017-05-02
- Inventor: Kazuhiro Mitamura , Koji Bando , Yukihiro Sato , Takamitsu Kanazawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2014-245136 20141203
- Main IPC: H02M7/537
- IPC: H02M7/537 ; H01L27/06 ; H01L29/739 ; H01L29/861 ; H01L23/31 ; H01L23/495 ; H02M7/00 ; H02P27/06 ; H01L23/00
Abstract:
For example, a semiconductor device has a lead connected to a second portion of a chip mounting part on which a semiconductor chip to be a heat source is mounted and a lead connected to a third portion of the chip mounting part on which the semiconductor chip to be the heat source is mounted. Further, each of the leads has a protruding portion protruding from a sealing member. In this manner, it is possible to enhance a heat dissipation characteristic of the semiconductor device.
Public/Granted literature
- US20160163615A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-09
Information query
IPC分类:
