Invention Grant
- Patent Title: Controlling reverse conducting IGBT
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Application No.: US14725269Application Date: 2015-05-29
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Publication No.: US09641168B2Publication Date: 2017-05-02
- Inventor: Johannes Georg Laven , Heiko Rettinger , Roman Baburske
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K17/567

Abstract:
A method for controlling a first switch and a second switch is suggested, wherein each switch is an RC-IGBT and wherein both switches are arranged as a half-bridge circuit. The method includes: controlling the first switch in an IGBT-mode; controlling the second switch such that it becomes desaturated when being in a DIODE-mode; wherein controlling the second switch starts before and lasts at least as long as the first switch changes its IGBT-mode from blocking state to conducting state.
Public/Granted literature
- US20160352326A1 Controlling Reverse Conducting IGBT Public/Granted day:2016-12-01
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