Invention Grant
- Patent Title: Semiconductor devices including nanowire capacitors and fabricating methods thereof
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Application No.: US15162912Application Date: 2016-05-24
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Publication No.: US09646971B2Publication Date: 2017-05-09
- Inventor: Dong-Hyun Im , Han-Jin Lim , Jin-Won Ma , Kong-Soo Lee , Ki-Vin Im
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0120183 20150826
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L23/535 ; H01L23/528 ; H01L23/532 ; H01L23/522 ; H01L29/06
Abstract:
Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.
Public/Granted literature
- US20170062435A1 SEMICONDUCTOR DEVICES INCLUDING NANOWIRE CAPACITORS AND FABRICATING METHODS THEREOF Public/Granted day:2017-03-02
Information query
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