Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14511313Application Date: 2014-10-10
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Publication No.: US09647105B2Publication Date: 2017-05-09
- Inventor: Naoko Kurahashi
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2013-234170 20131112
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/332 ; H01L29/778 ; H01L29/66 ; H01L29/51 ; H01L29/423 ; H01L29/20
Abstract:
A semiconductor device includes: a substrate; nitride semiconductor layers disposed over the substrate; a source electrode and a drain electrode disposed over the nitride semiconductor layers; a first insulating layer disposed over the nitride semiconductor layers, the source electrode and the drain electrode; a second insulating layer disposed over the first insulating layer; a first opening disposed in the second insulating layer and the first insulating layer and between the source electrode and the drain electrode, a portion of the nitride semiconductor layer being exposed in the first opening; a second opening disposed in the second insulating layer and between the source electrode and the drain electrode, a portion of the first insulating layer being exposed in the second opening; and a gate electrode disposed over the second insulating layer to bury the first opening and at least a portion of the second opening.
Public/Granted literature
- US20150129887A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-05-14
Information query
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