Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US14436309Application Date: 2014-07-15
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Publication No.: US09647127B2Publication Date: 2017-05-09
- Inventor: Xiang Liu , Woobong Lee
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201310752120 20131231
- International Application: PCT/CN2014/082218 WO 20140715
- International Announcement: WO2015/101011 WO 20150709
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L29/66
Abstract:
Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device comprises an insulating layer and a metal oxide semiconductor layer which are adjacent to each other, and the insulating layer is formed by steps of: forming a first silicon oxide film; and stabilizing the first silicon oxide film by filling a silicon dangling bond therein with a filling atom capable of being bonded to the silicon dangling bond.
Public/Granted literature
- US20160013318A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-01-14
Information query
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