According to one embodiment, a display device includes a thin-film transistor. The thin-film transistor includes a gate electrode, an insulating layer disposed to superpose the gate electrode, and a semiconductor layer disposed on the insulating layer. The gate electrode is opposed to at least the semiconductor layer in part. The gate electrode includes a laminate including a first layer containing silicon as a main component and a second layer which contains titanium as a main component and which is in contact with the first layer, and is in contact with the insulating layer.