A bandgap reference voltage generator includes a first and a second bipolar junction transistor, which is biased at a lower current per unit emitter area than that of the first transistor. Accordingly, the base to emitter voltage of first transistor is higher than that of the second transistor and a delta VBE is generated at the base of the first transistor with respect to the base of the second transistor. A first voltage divider generates a divided voltage of a VBE (fractional VBE) at a first center node. The fractional VBE is added to the VBE of the first transistor and subtracted from the VBE of the second transistor by closed loop feedback action to generate a temperature compensated reference voltage at the base of second transistor. The reference voltage can be amplified to higher voltage levels by using a resistor divider at the base of second transistor.