Invention Grant
- Patent Title: Method of operating a volatile memory device and a memory controller
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Application No.: US14858140Application Date: 2015-09-18
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Publication No.: US09653141B2Publication Date: 2017-05-16
- Inventor: Sang-Yun Kim , Jong-Pil Son , Su-A Kim , Chul-Woo Park , Hong-Sun Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0042411 20120424
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C11/406 ; G11C11/408 ; G11C11/4096
Abstract:
A method of operating a volatile memory device includes storing address information of weak cell rows. According to some examples, after writing to a weak cell row, a refresh operation is performed on the weak cell row within a predetermined time. According to some examples, the writing operation to a weak cell row may be performed with a longer write recovery time than a write recovery time to normal cell rows.
Public/Granted literature
- US20160012880A1 METHOD OF OPERATING A VOLATILE MEMORY DEVICE AND A MEMORY CONTROLLER Public/Granted day:2016-01-14
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