Invention Grant
- Patent Title: Structure and method for tunable memory cells including fin field effect transistors
-
Application No.: US14746606Application Date: 2015-06-22
-
Publication No.: US09653281B2Publication Date: 2017-05-16
- Inventor: Haining Yang , Yanxiang Liu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/02 ; G05B19/418 ; H01L27/11 ; H01L21/8234 ; H01L21/8238 ; H01L21/84 ; H01L29/78 ; H01L27/088 ; H01L27/092 ; H01L27/12
Abstract:
In a particular aspect, an integrated circuit includes a first gate structure coupled to a first fin field effect transistor (FinFET) device. The integrated circuit includes a second gate structure coupled to a second FinFET device. The first gate structure and the second gate structure are separated by a dielectric region. The integrated circuit further includes a metal contact having a first surface that is in contact with the dielectric region, the first gate structure, and the second gate structure.
Public/Granted literature
- US20160372316A1 STRUCTURE AND METHOD FOR TUNABLE MEMORY CELLS INCLUDING FIN FIELD EFFECT TRANSISTORS Public/Granted day:2016-12-22
Information query
IPC分类:
