Invention Grant
- Patent Title: Method of manufacturing thin film transistor substrate, method of manufacturing display apparatus, thin film transistor substrate, and display apparatus
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Application No.: US14568309Application Date: 2014-12-12
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Publication No.: US09653292B2Publication Date: 2017-05-16
- Inventor: Joonhwa Bae , Yoonho Khang
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse P.C.
- Priority: KR10-2014-0083897 20140704
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L27/12

Abstract:
A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.
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