Invention Grant
- Patent Title: Power semiconductor module comprising a case, base plate, and spacer
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Application No.: US15010114Application Date: 2016-01-29
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Publication No.: US09653369B2Publication Date: 2017-05-16
- Inventor: Yoshitaka Kimura , Rei Yoneyama , Ryo Goto , Akihiko Yamashita
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-083862 20150416
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/049 ; H01L23/10 ; H01L23/36 ; H01L23/373

Abstract:
It is an object to provide a power semiconductor module having a case shared for base plates of different sizes and having a high-stability base plate. The power semiconductor module according to the present invention includes: a base plate; an insulating substrate disposed on a first main surface of the base plate; a semiconductor chip disposed on an insulating substrate; a case for enclosing the base plate except a second main surface of the base plate facing the first main surface, the insulating substrate, and the semiconductor chip; and a spacer provided between the outer periphery of the base plate and the inner periphery of the case and in contact with both. The spacer has a bonding surface with a side surface of the base plate and the first main surface in the contact with the outer periphery of the base plate.
Public/Granted literature
- US20160307817A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2016-10-20
Information query
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