A semiconductor structure comprises conductive vias extending from an active surface of a substrate to a back side of the substrate and surrounded by a dielectric material. The conductive vias are surrounded by recessed isolation structures formed within the back side of the substrate. Conductive elements extend over the conductive vias and laterally over at least portions of the isolation structures. The conductive elements are in electrical contact with the conductive vias and electrically isolated from the substrate by the isolation structures. Thermally conductive elements in contact with the substrate are laterally spaced from the conductive elements. Die assemblies comprising the semiconductor structure, methods of forming the semiconductor structure, and methods of forming the die assemblies are also disclosed.