- Patent Title: Semiconductor device and semiconductor device manufacturing method
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Application No.: US14422573Application Date: 2012-09-04
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Publication No.: US09653390B2Publication Date: 2017-05-16
- Inventor: Yosuke Nakata , Masayoshi Tarutani
- Applicant: Yosuke Nakata , Masayoshi Tarutani
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2012/072476 WO 20120904
- International Announcement: WO2014/037996 WO 20140313
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L23/00
Abstract:
A semiconductor device of the present invention includes a semiconductor element, a surface electrode formed on a surface of the semiconductor element, a metal film formed on the surface electrode so as to have a joining portion and a stress relieving portion formed so as to border on and surround the joining portion, solder joined to the joining portion while avoiding the stress relieving portion, and an external electrode joined to the joining portion through the solder.
Public/Granted literature
- US20150235925A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-08-20
Information query
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