- 专利标题: Method of manufacturing semiconductor device
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申请号: US15203926申请日: 2016-07-07
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公开(公告)号: US09653412B1公开(公告)日: 2017-05-16
- 发明人: Kazunari Nakata
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JP2015-243779 20151215
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L23/00 ; H01L21/78 ; H01L21/683 ; H01L29/739 ; H01L29/66 ; H01L21/265 ; H01L21/324
摘要:
On a first wafer surface of a semiconductor wafer, a projection-depression shape is formed. On the first wafer surface, a resin member is so formed to have a resin outer peripheral end positioned away from a wafer outer peripheral end and expose the wafer outer peripheral end. By partially removing the semiconductor wafer, on a second wafer surface of the semiconductor wafer, formed is a recessed shape having a recessed-portion outer peripheral end positioned 0.5 mm or more inside from the resin outer peripheral end. After performing a processing on the second wafer surface, the resin member is removed.
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