Invention Grant
- Patent Title: Semiconductor devices having stacked structures and methods for fabricating the same
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Application No.: US14955124Application Date: 2015-12-01
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Publication No.: US09653430B2Publication Date: 2017-05-16
- Inventor: Taeyeong Kim , Byung Lyul Park , Seokho Kim , Pil-Kyu Kang , Hyoju Kim , Jin Ho An , Joo Hee Jang
- Applicant: Taeyeong Kim , Byung Lyul Park , Seokho Kim , Pil-Kyu Kang , Hyoju Kim , Jin Ho An , Joo Hee Jang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0169930 20141201
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/66 ; H01L23/00 ; H01L23/48 ; H01L23/528 ; H01L23/31 ; H01L21/683 ; H01L21/768

Abstract:
Semiconductor devices having stacked structures and methods for fabricating the same are provided. A semiconductor device includes at least one single block including a first semiconductor chip and a second semiconductor chip stacked thereon. Each of the first and second semiconductor chips includes a semiconductor substrate including a through-electrode, a circuit layer on a front surface of the semiconductor substrate, and a front pad that is provided in the circuit layer and is electrically connected to the through-electrode. The surfaces of the semiconductor substrates face each other. The circuit layers directly contact each other such that the semiconductor chips are bonded to each other.
Public/Granted literature
- US20160155724A1 SEMICONDUCTOR DEVICES HAVING STACKED STRUCTURES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2016-06-02
Information query
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