A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.