Invention Grant
- Patent Title: Memory device with self-boosted mechanism
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Application No.: US14670241Application Date: 2015-03-26
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Publication No.: US09659620B2Publication Date: 2017-05-23
- Inventor: Yen-Huei Chen , Hung-Jen Liao , Chih-Yu Lin , Jonathan Tsung-Yung Chang , Wei-Cheng Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C7/00 ; G11C8/00 ; G11C8/08 ; G11C11/418

Abstract:
An electronic device is disclosed that includes memory cells, a word line, a selection unit and a self-boosted driver. The memory cells are configured to store data. The word line is coupled to the memory cells. The selection unit is disposed at a first terminal of the word line, and is configured to transmit a selection signal to activate the word line according to one of a read command and a write command. The self-boosted driver is disposed at a second terminal of the word line, and is configured to pull up a voltage level of the word line according to a voltage level of the word line and a control signal.
Public/Granted literature
- US20160284387A1 MEMORY DEVICE Public/Granted day:2016-09-29
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