Invention Grant
- Patent Title: Focused radiation beam induced thin film deposition
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Application No.: US14580463Application Date: 2014-12-23
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Publication No.: US09659768B2Publication Date: 2017-05-23
- Inventor: Chia-Hao Yu , Yuan-Chih Chu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/02 ; C23C16/04

Abstract:
A method of depositing a material on a surface is disclosed. The method includes focusing a radiation beam on the surface and introducing a precursor gas near the surface wherein the precursor gas forms the material on the surface upon radiation by the radiation beam. The method further includes introducing an assistant gas near the surface wherein the assistant gas produces nitric oxide radicals upon radiation by the radiation beam. The nitric oxide radicals facilitate the dissociation process of the precursor gas and reduce contaminants in the deposited material.
Public/Granted literature
- US20160181094A1 Focused Radiation Beam Induced Thin Film Deposition Public/Granted day:2016-06-23
Information query
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