Invention Grant
- Patent Title: Layout construction for addressing electromigration
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Application No.: US13975074Application Date: 2013-08-23
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Publication No.: US09659936B2Publication Date: 2017-05-23
- Inventor: Seid Hadi Rasouli , Animesh Datta , Ohsang Kwon
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Chui-kiu Teresa Wong; Kenneth Vu
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L23/482 ; H01L27/02 ; H03K17/16 ; H03K17/687 ; H01L23/522

Abstract:
A first interconnect on an interconnect level connects a first subset of PMOS drains together of a CMOS device. A second interconnect on the interconnect level connects a second subset of the PMOS drains together. The second subset of the PMOS drains is different than the first subset of the PMOS drains. The first interconnect and the second interconnect are disconnected on the interconnect level. A third interconnect on the interconnect level connects a first subset of NMOS drains together of the CMOS device. A fourth interconnect on the interconnect level connects a second subset of the NMOS drains together. The second subset of the NMOS drains is different than the first subset of the NMOS drains. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, and fourth interconnects are coupled together though at least one other interconnect level.
Public/Granted literature
- US09786663B2 Layout construction for addressing electromigration Public/Granted day:2017-10-10
Information query
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