- Patent Title: Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, or the display module
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Application No.: US14632177Application Date: 2015-02-26
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Publication No.: US09660087B2Publication Date: 2017-05-23
- Inventor: Shunpei Yamazaki , Junichi Koezuka , Masami Jintyou , Daisuke Kurosaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-039139 20140228
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/26 ; H01L29/66
Abstract:
A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.
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