Invention Grant
- Patent Title: Pattern wafer for LEDs, epitaxial wafer for LEDs and method of manufacturing the epitaxial wafer for LEDs
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Application No.: US14894480Application Date: 2014-05-28
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Publication No.: US09660141B2Publication Date: 2017-05-23
- Inventor: Jun Koike
- Applicant: ASAHI KASEI E-MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: ASAHI KASEI E-MATERIALS CORPORATION
- Current Assignee: ASAHI KASEI E-MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2013-116024 20130531; JP2013-116025 20130531
- International Application: PCT/JP2014/064153 WO 20140528
- International Announcement: WO2014/192821 WO 20141204
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L21/02 ; H01L33/00 ; H01L21/66
Abstract:
A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle Θ meets 0°
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