Invention Grant
- Patent Title: Method of inspecting by-products and method of manufacturing semiconductor device using the same
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Application No.: US15175463Application Date: 2016-06-07
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Publication No.: US09660186B2Publication Date: 2017-05-23
- Inventor: Jinhye Bae , Wonjun Lee , Yoonsung Han , Hoon Han , Kyu-Man Hwang , Yongsun Ko
- Applicant: Samsung ELectronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2015-0140974 20151007
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L21/66
Abstract:
Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.
Public/Granted literature
- US20170104152A1 Method of Inspecting By-Products and Method of Manufacturing Semiconductor Device Using the Same Public/Granted day:2017-04-13
Information query
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